High K Dielectrics for Si Electronics (TF+EM-WeM)
Wednesday, Oct 20 2010 8:00AM, Room Dona Ana
Moderated by: Subhadra Gupta, University of Alabama
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8:00 AMTF+EM-WeM-1Moore's Law - From Simple Scaling to Integrating New Materials and Introducing New Device Architectures
8:40 AMTF+EM-WeM-3Non-destructive Depth Profiles of Hafnium Silicate Films by Angle-Resolved and Variable-Kinetic Energy XPS
9:00 AMTF+EM-WeM-4Many Electron Charge Transfer Multiplet (CTM) Theory Applied to Intrinsic Bonding Defects (O-atom vacancies) in High- k Gate Dielectrics
9:20 AMTF+EM-WeM-5Study of SiO2 and SiNx Passivation of HfInZnO Oxide Semiconductor Thin Film Transistor
9:40 AMTF+EM-WeM-6Capacitance-Voltage (C-V) and X-ray Photoelectron Spectroscopy (XPS) Study of the Effect of a La2O3 Layer in the TiN/HfO2/SiO2/p-Si Stack
10:40 AMTF+EM-WeM-9Modification of Defect-State Concentrations with Vacuum Ultraviolet and Ultraviolet Irradiation of Hafnium-Oxide Dielectric Layers
11:00 AMTF+EM-WeM-10Plasma Enhanced Atomic Layer Deposition of Ruthenium Ultra-Thin Films for Advanced Metallization
11:20 AMTF+EM-WeM-11Effects of Hydrogen Plasma Pretreatment on Superconformal Gap-Filling of Cu-Al Alloy
11:40 AMTF+EM-WeM-12Depth Resolved Cathodoluminescence Spectroscopy of Amorphous High-k Dielectric LaLuO3
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