Graphene and Carbon-based Devices (GR+EM+MS+TF+MI-WeM)
Wednesday, Oct 20 2010 8:00AM, Room Brazos
Moderated by: Nathan P. Guisinger, Argonne National Laboratory
Abstracts (Use Expand/Collapse to see/hide details)
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8:00 AMGR+EM+MS+TF+MI-WeM-1Epitaxial Graphene: Effects of Dielectric Overlayers and Device Design on FET Performance
8:20 AMGR+EM+MS+TF+MI-WeM-2Graphene Oxide on Patterned Self-Assembly Monolayer for Cancer Marker Detection
8:40 AMGR+EM+MS+TF+MI-WeM-3Spintronics in Graphene Based Nanostructures
9:20 AMGR+EM+MS+TF+MI-WeM-5CVD Gate Dielectrics and Bandgap Engineering of Graphene Layers
9:40 AMGR+EM+MS+TF+MI-WeM-6Characterization of Devices Fabricated from Electrostatically Transferred Graphene: Comparison with Epitaxial based Devices
10:40 AMGR+EM+MS+TF+MI-WeM-9Electron Transport in Dual-Gated Mono- and Bilayer Graphene Devices with High-k Dielectrics
11:20 AMGR+EM+MS+TF+MI-WeM-11In-situ X-ray Photoelectron Spectroscopy Studies of Ozone-based ALD Al2O3 Dielectrics on Graphite and Graphene
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